Imaging and Metrology of Silicon Carbide Wafers by Laser-based Optical Surface Inspection System

被引：4

作者：

Hatakeyama, T. ^{[1
]}

Ichinoseki, K. ^{[1
]}

Higuchi, N. ^{[2
]}

Fukuda, K. ^{[2
]}

Arai, K. ^{[2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, PERC, Adv Inverter Lab R&D Assoc Future Elect Devices, Cent 2,Umezono 1-1-1, Tsukuba, Ibaraki 3058568, Japan

[2] PERC, AIST, Central 2, Tsukuba, Ibaraki 3058568, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

Surface defect; Laser; Epitaxy; Substrate; Micropipe; Topography; 4H-SiC;

D O I：

10.4028/www.scientific.net/MSF.600-603.553

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

There is a great need for an in-line, high-speed and non-destructive inspection system capable of evaluating and analyzing the quality of SiC wafers for SiC power devices. We have examined whether the laser-based optical non-destructive inspection system by KLA-Tencor meets these requirements. Using this system, incoming inspection of purchased SiC wafers has been performed. The obtained inspection data show that micropipe density is sufficiently low in a device-grade wafer, and therefore, micropipes are not the main cause of device failure. The next challenges for a device-grade SiC wafer are reduction of epitaxial defects and relatively small defects classified as "particles".

引用

页码：553 / +

页数：2

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