Cu sputtered Cu/ZnO Schottky diodes on fluorine doped tin oxide substrate for optoelectronic applications

被引:32
作者
Rana, Vijay S. [1 ]
Rajput, Jeevitesh K. [1 ]
Pathak, Trilok K. [1 ,2 ]
Purohit, L. P. [1 ]
机构
[1] Gurukula Kangri Univ, Dept Phys, Semicond Res Lab, Haridwar, India
[2] TKCOE Teerthanker Mahaveer Univ, Dept Phys, Moradabad, India
关键词
Zinc oxide; Sol-gel; Schottky diode; Wrinkle structure; Current-voltage characteristics; ZNO THIN-FILMS; ZINC-OXIDE; LOW-COST; SI; HETEROJUNCTION; FABRICATION; PERFORMANCE;
D O I
10.1016/j.tsf.2019.04.019
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the present work, ZnO thin films were deposited on fluorine doped tin oxide (FTO) and soda lime glass substrates using sol-gel spin coating technique. Cu thin films were deposited on ZnO by the sputtering technique through a shadow mask for the Schottky diode application. The effect of solution concentration on the structural, morphological, optical and electrical properties of the deposited thin films were investigated. X-ray diffraction pattern shows that all thin films have a wurtzite structure with (002) orientation. Scanning electron micrographs revealed concentration dependent surface morphology. The transmittance of thin films were measured in the wavelength range 300 nm-800 nm and it was found that the optical bandgap decreased from 3.28 eV to 3.21 eV as molarity increased. For optoelectronic applications of the thin film samples, the current-voltage (I-V) measurements were performed for optimizing molar concentrations. The electronic parameters of the Cu/ZnO schottky diode such as ideality factor (eta) and barrier height (Phi(B)) were obtained using I-V curve. The highest stauration current was obtained 8.67x10(-4) A for 0.5 M thin film sample at 5 V bias voltage. The obtained results indicate that the electrical properties of the Cu/ZnO Schottky diodes can be tuned by molar concentrations.
引用
收藏
页码:79 / 85
页数:7
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