Electrical Characterization of HfO2 Based Resistive RAM Devices Having Different Bottom Electrode Metallizations

被引：0

作者：

Tekin, S. B. ^{[1
]}

Kalem, S. ^{[1
]}

Kaya, Z. E. ^{[1
]}

Jalaguier, E. ^{[2
]}

机构：

[1] TUBITAK BILGEM Informat & Informat Secur Res Ctr, Kocaeli, Turkey

[2] CEA LETI, 17 Ave Martyrs, F-38054 Grenoble, France

来源：

2018 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2018年

关键词：

Resistive RAM; RRAM; OxRAM; HfO2; resistive switching; embedded non-volatile memory; resistive memory; capacitance;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

HfO2 based resistive RAM devices as the important candidates of future embedded non-volatile memory technology were investigated using state of art physical and electrical characterization methods. Memory stacks used for measurements, named MARS, having four different bottom electrode materials fabricated by CEA-LETI and ASM cooperation. The effects of bottom electrode metallization on Forming, switching and capacitive characteristics were studied and most efficient combinations were determined among these structures. It was observed that devices having atomic layer deposited (ALD) bottom electrode have some capacitive properties. Also TiN and TiWN bottom electrodes indicate promising switching characteristics and low operation voltages among others.

引用

页码：61 / 64

页数：4

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