Young's modulus and residual stress of MEMS gold beams based on the GaAs MMIC process

被引：11

作者：

Yang, Gang ^{[1
]}

Liao, Xiaoping ^{[1
]}

Zhang, Zhiqiang ^{[1
]}

机构：

[1] Southeast Univ, Minist Educ, Key Lab MEMS, Nanjing 210096, Jiangsu, Peoples R China

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2013年 / 23卷 / 04期

基金：

中国国家自然科学基金;

关键词：

THIN-FILMS; POWER SENSOR; MECHANICAL-PROPERTIES; NONDETECTION STATES; TECHNOLOGY; MICROSCOPE; BRIDGES;

D O I：

10.1088/0960-1317/23/4/045002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes the theory, simulation, fabrication and measurements of Young's modulus and the residual stress of the GaAs monolithic microwave integrated circuit (MMIC)-based microelectromechanical systems (MEMS) gold beams. In this paper, some cantilever and bridge MEMS gold beams with different lengths are fabricated in order to measure Young's modulus and the residual stress, which is completely compatible with the GaAs MMIC process. In the measurement, the resonance method is utilized due to the non-destruction and the high accuracy. These measurements are analyzed using analytical beam theory. After the evaluation process, the accuracy of the measurement results is discussed.

引用

页数：6

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