Low temperature firing and microwave dielectric properties of Bi4-xGe3O12-1.5x ceramics

被引：5

作者：

Ma, Xing-Hua ^{[1
]}

Kweon, Sang-Hyo ^{[1
]}

Nahm, Sahn ^{[1
,2
,3
]}

Kang, Chong-Yun ^{[2
,3
]}

Yoon, Seok-Jin ^{[3
]}

Kim, Young-Sik ^{[4
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea

[2] KU KIST, Dept Nanobioinformat Technol, Grad Sch Converging Sci & Technol, Anam Dong 5 Ga, Seoul 136701, South Korea

[3] KIST, Ctr Elect Mat, 39-1 Hawolgok Dong, Seoul 136791, South Korea

[4] Korea Univ, Dept Radio Commun Engn, Seoul 136701, South Korea

来源：

CERAMICS INTERNATIONAL | 2017年 / 43卷 / 02期

关键词：

Bi(4-x)Ge(3)O(12-1.5x)ceramics; Bi2O3; deficiency; Low-temperature firing; Microwave dielectric properties; BISMUTH-GERMANATE; GLASS; DETECTORS; POROSITY; MN;

D O I：

10.1016/j.ceramint.2016.11.121

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Dense Bi4Ge3O12 ceramics sintered at 850 degrees C had a relative permittivity (epsilon(r)) of 15.7, temperature coefficient of resonant frequency (tau(f)) of 24.2 ppm/degrees C, and quality factor (Qxf) of 28,361 GHz. However, because of the existence of Bi12GeO20 as a secondary phase, the microwave dielectric properties of Bi4Ge3O12 would be degraded. Therefore, to avoid the formation of the Bi12GeO20 secondary phase, Bi2O3-deficient ceramics with 0.1<_x<_0.6 were sintered at 850 degrees C. A single phase of Bi3.6Ge3O11.4 (x=0.4) ceramic sintered at 850 degrees C for 5 h without any secondary phase exhibited suitable microwave dielectric properties for a ceramic substrate: epsilon(r)=14.9, tau(f) =-9.5 ppm/degrees C, and Qxf=53,277 GHz.

引用

页码：2801 / 2806

页数：6

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