Derivative Superposition Numerical Method for Double-Gate MOSFET Transistor Application to RF Mixer

被引：0

作者：

Zhu, Haifeng ^{[1
,2
]}

Huang, Shuai ^{[1
,2
]}

Shi, Min ^{[1
]}

Zhang, Wei ^{[1
]}

Sun, Ling ^{[1
]}

He, Lin ^{[2
]}

Zhu, Xiaoan ^{[2
]}

Wang, Cheng ^{[2
]}

He, Xiaomeng ^{[2
]}

Liang, Hailang ^{[2
]}

He, Qingxing ^{[3
]}

Du, Caixia ^{[3
]}

He, Jin ^{[1
,2
]}

机构：

[1] Peking Univ, Sch Elect & Comp Sci, Beijing 100871, Peoples R China

[2] Peking Univ, Shenzhen Inst, Shenzhen SOC Key Lab, PKU HKUST Shenzhen Hongkong Inst, Shenzhen 518057, Peoples R China

[3] Shenzhen Huayue Terascale Chip Elect Co Ltd, Shenzhen 158056, Peoples R China

来源：

JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE | 2014年 / 11卷 / 09期

关键词：

Double-Gate (DG) MOSFET; Linearity; IIP3; Device Simulation; Intermodulation Distortion; Mixer; LINEARITY; INVERSION; MODEL; OPTIMIZATION; CMOS;

D O I：

10.1166/jctn.2014.3587

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A high linear double-gate (DG) MOSFET application to RF mixer is proposed based on derivative superposition method which were successfully used in Bulk CMOS region. By independently biasing front and back gate voltage of DG MOSFET, one DG MOSFET device is reviewed as two parallel devices. In this way, we realize the derivative superposition method application in the DG MOSFET linearity analysis and high performance RF mixer. Via two-dimensional (2D) TCAD device simulation and through the third-order transconductance (g(m3)) cancellation, we get the some interesting results of DG MOSFET mixer different from the Bulk CMOS mixer. It is found that the DG MOSFET is suitable to work as a single device mixer because of coupling effect of two gates, e.g., a high linear independent DG MOSFET mixer shows 9.2 dB improvement on IIP3 corresponding to the symmetrical DG mixer with the same DC current.

引用

页码：1914 / 1918

页数：5

共 23 条

[1]

[Anonymous], 2005, TCAD SENTAURUS DEVIC

[2] DOUBLE-GATE SILICON-ON-INSULATOR TRANSISTOR WITH VOLUME INVERSION - A NEW DEVICE WITH GREATLY ENHANCED PERFORMANCE [J].

BALESTRA, F ;

CRISTOLOVEANU, S ;

BENACHIR, M ;

BRINI, J ;

ELEWA, T .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) :410-412

[3]

Bose P.K., 2012, Quant Matter, V1, P89, DOI 10.1166/qm.2012.1009

[4]

Cakici T, 2003, 2003 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, P21

[5] High-density reduced-stack logic circuit techniques using independent-gate controlled double-gate devices [J].

Chiang, Meng-Hsueh ;

Kim, Keunwoo ;

Chuang, Ching-Te ;

Tretz, Christophe .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (09) :2370-2377

[6] Linearity study of multiple independent gate field effect transistor (MIGFET) under symmetric and asymmetric operations [J].

Gong, Jing-Feng ;

Chan, Philip C. H. .

SOLID-STATE ELECTRONICS, 2008, 52 (02) :259-263

[7] Computation Efficient Yet Accurate Surface Potential Based Analytic Model for Symmetric DG MOSFETs to Predict Current-Voltage Characteristics [J].

He, Jin ;

Shi, Min ;

Zhang, Lining ;

Zhang, Jian ;

Liu, Chi ;

Zhuang, Hao ;

Chan, Mansun .

JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2011, 8 (08) :1548-1551

[8] Tip-Based Nanofabrication as a Rapid Prototyping Tool for Quantum Science and Technology [J].

Herman, Aleksander .

REVIEWS IN THEORETICAL SCIENCE, 2013, 1 (01) :3-33

[9] Linearity analysis of CMOS for RF application [J].

Kang, S ;

Choi, B ;

Kim, B .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (03) :972-977

[10] Optimization of RF linearity in DG-MOSFETs [J].

Kaya, S ;

Ma, W .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (05) :308-310

← 1 2 3 →