Plasma-assisted MBE growth of AlN/GaN/AlN heterostructures on Si (111) substrate

被引：13
|
作者：
Yusoff, M. Z. Mohd [1 ,2 ]
Mahyuddin, A. [3 ]
Hassan, Z. [2 ]
Yusof, Y. [2 ]
Ahmad, M. A. [2 ]
Chin, C. W. [2 ]
Abu Hassan, H. [2 ]
Abdullah, M. J. [2 ]
机构：
[1] Univ Teknol MARA UiTM, Dept Appl Sci, Permatang Pauh 13500, Penang, Malaysia
[2] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, George Town 11800, Malaysia
[3] Univ Kuala Lumpur, Malaysian Inst Ind Technol MITEC, Bandar Seri Alam 81750, Johor, Malaysia
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2013年 / 60卷
关键词：
AlN; MBE; XRD; TEM; EDS line analysis; EPITAXIAL-GROWTH; ALN; SI(111); FILMS; GAN;
D O I：
10.1016/j.spmi.2013.05.034
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The microstructure properties of AlN/GaN/AlN heterostructures on Si (111) substrate grown by plasma-assisted molecular beam epitaxy (MBE) have been studied and investigated. Reflection high energy electron diffraction (RHEED), high-resolution X-ray diffraction (HR-XRD), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDS) analysis were used to investigate a reconstruction pattern, cross section, and crystalline quality of the AlN/GaN/AlN heterostructures on Si (111) susbstrate. The reflection high energy electron diffraction images indicated a good surface morphology of AlN/GaN/AlN heterostructures on Si (111) substrate. The full width at half maximum (FWHM) obtained from XRD measurement was 0.46 (27.6 arcmin), indicating a good quality layer of sample. From TEM measurements, it is found that the crystalline quality of the AlN/GaN/AlN heterostructures is good comparable with previous report. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：500 / 507
页数：8
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