Electronic properties of H-terminated diamond during NO2 and O3 adsorption and desorption

被引：49

作者：

Sato, Hisashi ^{[1
]}

Kasu, Makoto ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

关键词：

Diamond; Hydrogen-termination; Molecular adsorption; Hole channel; SURFACE CONDUCTIVE LAYER; FIELD-EFFECT TRANSISTORS; FILMS; MECHANISM; GHZ;

D O I：

10.1016/j.diamond.2011.12.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated hole sheet concentration and mobility during NO2 or O-3 adsorption/desorption on H-terminated diamond surface with a hole sheet concentration (p(s)) of similar to 1 x 10(14) cm(-2). During NO2 adsorption, P-s first increased with time and eventually saturated. When the NO2 gas concentration increased in a range of <300 ppm, the saturated value of p(s) increased. However, in the range of >300 ppm, the values were the same, and we therefore determined that the high limit of p(s) is similar to 9 x 10(13) cm(-2) for (001) orientation. Further, we found that during the NO2 adsorption process hole mobility (mu) stays constant, while p(s) is increasing. We propose a NO2 adsorption/desorption and hole-generation model to explain these experimental results. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：99 / 103

页数：5

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