Monolayer Graphene Film on ZnO Nanorod Array for High-Performance Schottky Junction Ultraviolet Photodetectors

被引：290

作者：

Nie, Biao ^{[1
,2
]}

Hu, Ji-Gang ^{[1
,2
]}

Luo, Lin-Bao ^{[1
,2
]}

Xie, Chao ^{[1
,2
]}

Zeng, Long-Hui ^{[1
,2
]}

Lv, Peng ^{[1
,2
]}

Li, Fang-Ze ^{[1
,2
]}

Jie, Jian-Sheng ^{[3
,4
]}

Feng, Mei ^{[5
]}

Wu, Chun-Yan ^{[1
,2
]}

Yu, Yong-Qiang ^{[1
,2
]}

Yu, Shu-Hong ^{[5
]}

机构：

[1] Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China

[2] Hefei Univ Technol, Anhui Prov Key Lab Adv Funct Mat & Devices, Hefei 230009, Anhui, Peoples R China

[3] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China

[4] Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China

[5] Univ Sci & Technol China, Div Nanomat & Chem, Hefei Natl Lab Phys Sci Microscale, Dept Chem, Hefei 230026, Anhui, Peoples R China

来源：

SMALL | 2013年 / 9卷 / 17期

基金：

中国国家自然科学基金;

关键词：

ZnO nanorod arrays; graphene; Schottky barriers; photodetectors; light trapping; CURRENT-VOLTAGE CHARACTERISTICS; FABRICATION;

D O I：

10.1002/smll.201203188

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new Schottky junction ultraviolet photodetector (UVPD) is fabricated by coating a free-standing ZnO nanorod (ZnONR) array with a layer of transparent monolayer graphene (MLG) film. The single-crystalline [0001]-oriented ZnONR array has a length of about 8-11 m, and a diameter of 100 approximate to 600 nm. Finite element method (FEM) simulation results show that this novel nanostructure array/MLG heterojunction can trap UV photons effectively within the ZnONRs. By studying the I-V characteristics in the temperature range of 80-300 K, the barrier heights of the MLG film/ZnONR array Schottky barrier are estimated at different temperatures. Interestingly, the heterojunction diode with typical rectifying characteristics exhibits a high sensitivity to UV light illumination and a quick response of millisecond rise time/fall times with excellent reproducibility, whereas it is weakly sensitive to visible light irradiation. It is also observed that this UV photodetector (PD) is capable of monitoring a fast switching light with a frequency as high as 2250 Hz. The generality of the above results suggest that this MLG film/ZnONR array Schottky junction UVPD will have potential application in future optoelectronic devices.

引用

页码：2872 / 2879

页数：8

共 42 条

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