Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

被引：0

作者：

Bondarenko, D. N. ^{[1
,2
]}

Gridchin, V. O. ^{[1
,2
,3
]}

Kotlyar, K. P. ^{[1
]}

Baranov, A. I. ^{[2
]}

Maksimova, A. A. ^{[2
]}

Reznik, R. R. ^{[1
,2
,3
,4
]}

Cirlin, G. E. ^{[1
,2
,3
,4
]}

机构：

[1] St Petersburg State Univ, St Petersburg, Russia

[2] Alferov Univ, St Petersburg, Russia

[3] IAI RAS, St Petersburg, Russia

[4] ITMO Univ, St Petersburg, Russia

来源：

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2022年 / 15卷 / 03期

基金：

俄罗斯科学基金会;

关键词：

micro light-emitting diodes; molecular beam epitaxy; GaN; InGaN nanowires; silicon substrates; thick core-shell InGaN insertions;

D O I：

10.18721/JPM.153.355

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The paper presents an approach to growth of GaN nanowires with thick core-shell InGaN insertions with a high indium content for creation of LED structure. The study of the electrical properties shows typical diode dependence. The results obtained can make a significant contribution to the development of light emitting diodes on silicon substrates.

引用

页码：281 / 284

页数：4

共 7 条

[1] Semiconductor nanowhiskers: Synthesis, properties, and applications [J].

Dubrovskii, V. G. ;

Cirlin, G. E. ;

Ustinov, V. M. .

SEMICONDUCTORS, 2009, 43 (12) :1539-1584

[2] Multi-colour light emission from InGaN nanowires monolithically grown on Si substrate by MBE [J].

Gridchin, Vladislav O. ;

Kotlyar, Konstantin P. ;

Reznik, Rodion R. ;

Dragunova, Anna S. ;

Kryzhanovskaya, Natalia, V ;

Lendyashova, Vera V. ;

Kirilenko, Demid A. ;

Soshnikov, Ilya P. ;

Shevchuk, Dmitrii S. ;

Cirlin, George G. .

NANOTECHNOLOGY, 2021, 32 (33)

[3] Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays [J].

Ha Quoc Thang Bui ;

Velpula, Ravi Teja ;

Jain, Barsha ;

Aref, Omar Hamed ;

Hoang-Duy Nguyen ;

Lenka, Trupti Ranjan ;

Hieu Pham Trung Nguyen .

MICROMACHINES, 2019, 10 (08)

[4] Solid phase immiscibility in GaInN [J].

Ho, IH ;

Stringfellow, GB .

APPLIED PHYSICS LETTERS, 1996, 69 (18) :2701-2703

[5] Metal-induced gap states and Schottky barrier heights at nonreactive GaN/noble-metal interfaces [J].

Picozzi, S ;

Continenza, A ;

Satta, G ;

Massidda, S ;

Freeman, AJ .

PHYSICAL REVIEW B, 2000, 61 (24) :16736-16742

[6] Circumventing the miscibility gap in InGaN nanowires emitting from blue to red [J].

Roche, Elissa ;

Andre, Yamina ;

Avit, Geoffrey ;

Bougerol, Catherine ;

Castelluci, Dominique ;

Reveret, Francois ;

Gil, Evelyne ;

Medard, Francois ;

Leymarie, Joel ;

Jean, Theo ;

Dubrovskii, Vladimir G. ;

Trassoudaine, Agnes .

NANOTECHNOLOGY, 2018, 29 (46)

[7] Nanowire photonics [J].

Yan, Ruoxue ;

Gargas, Daniel ;

Yang, Peidong .

NATURE PHOTONICS, 2009, 3 (10) :569-576

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