Monte Carlo study of the early growth stages of 3C-SiC on misoriented <11-20> and <1-100> 6H-SiC substrates: role of step-island interaction

被引：0
作者：
Camarda, M. [1 ]
La Magna, A. [1 ]
La Via, F. [1 ]
机构：
[1] IMM CNR, I-95121 Catania, Italy
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 11-12 | 2014年 / 11卷 / 11-12期
关键词：
Monte Carlo simulations; hetero-polytypical growth; 3C-SiC; step-to-island interaction; SILICON-CARBIDE; FABRICATION; CRYSTAL; MOTION; LAYERS; CVD;
D O I：
10.1002/pssc.201400197
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this paper, we use three-dimensional kinetic Monte Carlo simulations on superlattices to study the heteropolytypical growth of cubic silicon carbide polytype (3CSiC) on hexagonal 6H-SiC step-bunched substrates with miscuts towards the < 11-20 > and < 1-100 > directions. We find that the preferential 3C conversion observed on < 1-100 > misoriented substrates could be due to a different step-to-island interaction which enhances island stability and expansion in this specific direction. For this reason 3-4 degrees off step-bunched 6H substrates with miscut towards the < 1-100 > direction should be the best choice for the stable and reproducible hetero-polytypical growth of high quality cubic epitaxial films. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：1606 / 1610
页数：5
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