Vapor-Phase Synthesis of Gallium Phosphide Nanowires

被引：29

作者：

Gu, Zhanjun ^{[1
,2
]}

Paranthaman, M. Parans ^{[3
]}

Pan, Zhengwei ^{[1
,2
]}

机构：

[1] Univ Georgia, Fac Engn, Athens, GA 30602 USA

[2] Univ Georgia, Dept Phys & Astron, Athens, GA 30602 USA

[3] Oak Ridge Natl Lab, Div Chem Sci, Oak Ridge, TN 37831 USA

来源：

CRYSTAL GROWTH & DESIGN | 2009年 / 9卷 / 01期

关键词：

GAP; GROWTH; OXIDE;

D O I：

10.1021/cg8008305

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Gallium phosphide (GaP) nanowires were synthesized in a high yield by vapor-phase reaction of gallium vapor and phosphorus vapor at 1150 degrees C in a tube furnace system. The nanowires have diameters in the range of 25-100 nm and lengths of Lip to tens of micrometers. Twinning growth occurs in GaP nanowires, and as a result most nanowires contain a high density of twinning faults. Novel necklacelike GaP nanostructures that were formed by stringing tens of amorphous Ga-P-O microbeads upon one crystalline GaP nanowires were also found in some synthesis runs. This simple vapor-phase approach may be applied to synthesize other important group III-V compound nanowires.

引用

页码：525 / 527

页数：3

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