Competitive Si and La effect in HfO2 phase stabilization in multi-layer (La2O3)0.08(HfO2) films

被引：8

作者：

Cao, Duo ^{[1
]}

Cheng, Xinhong ^{[1
]}

Yu, Yuehui ^{[1
]}

Li, Xiaolong ^{[2
]}

Liu, Chunze ^{[2
]}

Shen, Dashen ^{[3
]}

Maendl, Stephan ^{[4
]}

机构：

[1] Chinese Acad Sci, SIMIT, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Shanghai Synchrotron Radiat Facil, Shanghai 200061, Peoples R China

[3] Univ Alabama, Huntsville, AL 35899 USA

[4] Leibniz Inst Oberflachenmodifizierung, D-04318 Leipzig, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 08期

关键词：

ZRO2;

D O I：

10.1063/1.4819198

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of Si diffusion in HfO2 and the presence of La on phase transformation were investigated. Tetragonal HfO2 structures exhibited high permittivity, and the addition of exotic atoms to HfO2 facilitated tetragonal phase transformation. In multi-layer (La2O3)(0.08)(HfO2) films, the top HfO2 layer was transformed into a perfect tetragonal structure, and the bottom HfO2 layer near the interfacial layer was of a cubic structure, after annealing at 800 degrees C. The permittivity reached 50-60. Si diffusion into the HfO2 film stabilized the tetragonal structure, and La incorporation into HfO2 facilitated the transition of the cubic structure. (C) 2013 AIP Publishing LLC.

引用

页数：4

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