Characteristics of 5M modulated martensite in Ni-Mn-Ga magnetic shape memory alloys

被引：8
作者：
Cakir, A. [1 ,2 ]
Acet, M. [2 ,3 ]
Righi, L. [4 ]
Albertini, F. [5 ]
Farle, M. [2 ,3 ]
机构：
[1] Mugla Univ, Met & Malzeme Muhendisligi Bolumu, TR-48000 Mugla, Turkey
[2] Duisburg Essen Univ, Fac Phys, D-47048 Duisburg, Germany
[3] Univ Duisburg Essen, Ctr Nanointegrat CENIDE, D-47048 Duisburg, Germany
[4] Univ Parma, Dipartimento Chim GIAF, I-43010 Parma, Italy
[5] CNR, IMEM, I-43010 Parma, Italy
来源：
AIP ADVANCES | 2015年 / 5卷 / 09期
关键词：
FIELD-INDUCED STRAIN; CRYSTAL-STRUCTURES; HEUSLER ALLOYS; PHASES;
D O I：
10.1063/1.4932233
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The applicability of the magnetic shape memory effect in Ni-Mn-based martensitic Heusler alloys is closely related to the nature of the crystallographically modulated martensite phase in these materials. We study the properties of modulated phases as a function of temperature and composition in three magnetic shape memory alloys Ni49.8Mn25.0Ga25.2, Ni49.8Mn27.1Ga23.1 and Ni49.5Mn28.6Ga21.9. The effect of substituting Ga for Mn leads to an anisotropic expansion of the lattice, where the b-parameter of the 5M modulated structure increases and the a and c-parameters decrease with increasing Ga concentration. The modulation vector is found to be both temperature and composition dependent. The size of the modulation vector corresponds to an incommensurate structure for Ni49.8Mn25.0Ga25.2 at all temperatures. For the other samples the modulation is incommensurate at low temperatures but reaches a commensurate value of q approximate to 0.400 close to room temperature. The results show that commensurateness of the 5M modulated structure is a special case of incommensurate 5M at a particular temperature. (C) 2015 Author(s).
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页数：5
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