Embedded graphene for large-area silicon-based devices

被引：15

作者：

Gluba, M. A. ^{[1
]}

Amkreutz, D. ^{[1
]}

Troppenz, G. V. ^{[1
]}

Rappich, J. ^{[1
]}

Nickel, N. H. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Silizium Photovolta, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 07期

关键词：

CHEMICAL-VAPOR-DEPOSITION; BILAYER GRAPHENE; HIGH-QUALITY; FILMS; SCATTERING; STRAIN;

D O I：

10.1063/1.4818461

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Macroscopic graphene films buried below amorphous and crystalline silicon capping layers are studied by Raman backscattering spectroscopy and Hall-effect measurements. The graphene films are grown by chemical vapor deposition on copper foil and transferred to glass substrates. Uncapped films possess charge-carrier mobilities of 2030 cm(2)/Vs at hole concentrations of 3.6 x 10(12) cm(-2). Graphene withstands the deposition and subsequent crystallization of silicon capping layers. However, the crystallinity of the silicon cap has large influence on the field-induced doping of graphene. Temperature dependent Hall-effect measurements reveal that the mobility of embedded graphene is limited by charged-impurity and phonon-assisted scattering. (C) 2013 AIP Publishing LLC.

引用

页数：5

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