Investigation of dielectric modulated (DM) double gate (DG) junctionless MOSFETs for application as a biosensors

被引：75

作者：

Ajay ^{[1
]}

Narang, Rakhi ^{[2
]}

Saxena, Manoj ^{[3
]}

Gupta, Mridula ^{[1
]}

机构：

[1] Univ Delhi, Dept Elect Sci, Semicond Device Res Lab, New Delhi 110021, India

[2] Univ Delhi, Sri Venkateswara Coll, Dept Elect, New Delhi 110021, India

[3] Univ Delhi, Dept Elect, Deen Dayal Upadhyaya Coll, New Delhi 110015, India

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 85卷

关键词：

Analytical; Dielectric modulation; Drain current; junctionless; Modeling; MOSFET; Nanogap; Simulation; Threshold voltage; TCAD; FIELD-EFFECT TRANSISTOR; SOI MOSFETS; MODEL; SYSTEM; SENSITIVITY; SENSOR;

D O I：

10.1016/j.spmi.2015.04.040

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper, an analytical model for Junctionless (JL) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) based biosensor for label free electrical detection of biomolecules like enzyme, cell, DNA etc. using the Dielectric Modulation (DM) technique has been developed. The analytical results are validated with the help of "Sentaurus" device simulation software. For the biomolecule immobilization, nanogap cavity is formed in the JL MOSFET by etching gate oxide layer from both source as well as drain end of the channel. As a result, the surface potential in the channel underneath the nanogap cavity region is affected by the neutral and charged biomolecules that binds to SiO2 adhesion layer in the cavity. The surface potential solution is obtained by solving a 2-D Poisson's equation assuming parabolic potential profile in the channel. The shift in threshold voltage and drain current of the device has been considered as the sensing metric for detection of biomolecules under dry environment condition. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：557 / 572

页数：16

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