Hall mobility manipulation in TiO2-x semiconductor films by hydrogen-ion irradiation

被引：7
作者：
Yeo, C. S. [1 ]
Chung, Kwun-Bum [1 ]
Song, J. H. [2 ]
Chae, K. H. [2 ]
Park, Jin-Seong [3 ]
Song, J. -H. [4 ]
Park, Sang Han [4 ]
Cho, Mann-Ho [4 ]
机构：
[1] Dankook Univ, Dept Phys, Cheonan 330714, South Korea
[2] Korea Inst Sci & Technol, Nano Anal Ctr, Seoul 136791, South Korea
[3] Hanyang Univ, Dept Mat Sci & Engn, Seoul 133791, South Korea
[4] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2013年 / 62卷 / 05期
关键词：
Ion irradiation; TiO2-x; Hydrogen ion; THIN-FILMS; TRANSPARENT; TRANSISTORS; PHOTOCATALYSIS; FABRICATION; KINETICS;
D O I：
10.3938/jkps.62.781
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The effects of different irradiation doses of hydrogen ions on TiO2-x semiconductor films were investigated. The total doses were controlled between similar to 10(14) and similar to 10(15) atom/cm(2) at an acceleration energy of 110 keV. The Hall mobility was manipulated by changing the irradiation dose while the carrier concentration was not. The amorphous crystal structure was consistently maintained upon irradiation. The electronic structures of the molecular orbitals in the conduction band were modified, and the band edge states below the conduction band increased with increasing irradiation dose. These changes in electronic structure were correlated to the chemical bonding states and could lead to variations in the Hall mobility without a structural transformation.
引用
收藏
页码：781 / 786
页数：6
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