Partial Discharge of Gel Insulated High Voltage Power Modules subjected to Unconventional Voltage Waveforms

被引：0

作者：

Madonia, A. ^{[2
]}

Romano, P. ^{[2
]}

Hammarstrom, T. ^{[1
]}

Gubanski, S. M. ^{[1
]}

Viola, F. ^{[2
]}

Imburgia, A. ^{[2
]}

机构：

[1] Chalmers Univ Technol, Dept Mat & Mfg Technol, Gothenburg, Sweden

[2] Univ Palermo, Dept Energy Informat Engn & Math Models DE1M, Palermo, Italy

来源：

2016 IEEE CONFERENCE ON ELECTRICAL INSULATION AND DIELECTRIC PHENOMENA (IEEE CEIDP) | 2016年

关键词：

Partial Discharge; Gel insulation; IGBT; SILICONE GEL;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Performances and duration of the new generation of high voltage power electronic components are dependent on dielectric materials aim to insulating their internal terminals. The presence of defects, some due to faults generated during the manufacturing process, but also due to the internal design of layers and connections, can cause local enhancements of electric field and consequently possible activity of partial discharges phenomena or other effects (aging, tracking) that may result in reduction of device reliability. Furthermore, the usage of unconventional voltage waveforms, like square waves or pulse width modulated waves, additionally increases the electrical aging of the insulation system as compared to conventional sinusoidal waves.

引用

页码：715 / 718

页数：4

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