Effect of high temperature annealing on defects and optical properties of ZnO single crystals

被引：18

作者：

Jiang, M. ^{[1
]}

Wang, D. D. ^{[1
]}

Zou, B. ^{[1
]}

Chen, Z. Q. ^{[1
]}

Kawasuso, A. ^{[2
]}

Sekiguchi, T. ^{[3
]}

机构：

[1] Wuhan Univ, Dept Phys, Hubei Nucl Solid Phys Key Lab, Wuhan 430072, Peoples R China

[2] Japan Atom Energy Agcy, Adv Sci Res Ctr, Takasaki, Gunma 3701292, Japan

[3] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2012年 / 209卷 / 11期

基金：

中国国家自然科学基金;

关键词：

annealing; cathodoluminescence; point defects; positron annihilation; ZnO; POSITRON-ANNIHILATION; COPPER; PHOTOLUMINESCENCE; SEMICONDUCTORS; LUMINESCENCE; HYDROGEN;

D O I：

10.1002/pssa.201127527

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hydrothermal grown ZnO single crystals were annealed in N-2 or O-2 between 900 and 1300 degrees C. Positron lifetime measurements reveal a single lifetime in all the ZnO samples before and after annealing. The positron lifetime is about 181 ps after annealing at 900 degrees C in either N-2 or O-2 atmosphere. However, increase of the positron lifetime is observed after further annealing the sample at higher temperatures up to 1300 degrees C, and it has a faster increase in O-2 ambient. Temperature dependence measurements show that the positron lifetime has very slight increase with temperature for the 900 degrees C annealed sample, while it shows notable variation for the sample annealed at 1300 degrees C. This implied that annealing at high temperature introduces additional defects. These defects are supposed to be Zn vacancy-related defects. Cathodoluminescence (CL) measurements indicates enhancement of both UV and green emission after annealing, and the enhancement of green emission is much stronger for the samples annealed in O-2 ambient. The possible origin of green emission is tentatively discussed. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2126 / 2130

页数：5

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