Enhanced formation of Ge nanocrystals in Ge:SiO2 layers by swift heavy ions

被引：7

作者：

Antonova, I. V. ^{[1
]}

Skuratov, V. A. ^{[2
]}

Volodin, V. A. ^{[1
,6
]}

Smagulova, S. A. ^{[3
]}

Marin, D. M. ^{[1
,6
]}

van Vuuren, A. Janse ^{[4
]}

Neethling, J. ^{[4
]}

Jedrzejewski, J. ^{[5
]}

Balberg, I. ^{[5
]}

机构：

[1] Russian Acad Sci, Siberian Div, Inst Semicond Phys, Novosibirsk 630090, Russia

[2] Joint Inst Nucl Res, Dubna 141980, Russia

[3] NE Fed Univ, Yakutsk 677000, Russia

[4] Nelson Mandela Metropolitan Univ, Ctr HRTEM, Port Elizabeth, South Africa

[5] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel

[6] Novosibirsk State Univ, Novosibirsk 630090, Russia

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2012年 / 45卷 / 28期

基金：

以色列科学基金会; 俄罗斯基础研究基金会;

关键词：

GERMANIUM NANOCRYSTALS; SILICON NANOCRYSTALS; QUANTUM-CONFINEMENT; OPTICAL-PROPERTIES; SIO2; PHOTOLUMINESCENCE; SPECTROSCOPY; FILMS; SHAPE; SIZE;

D O I：

10.1088/0022-3727/45/28/285302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper we report the ability of swift heavy Xe ions with an energy of 480 MeV and a fluence of 10(12) cm (2) to enhance the formation of Ge nanocrystals within SiO2 layers with variable Ge contents. These Ge-SiO2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge : SiO2 films with subsequent annealing at 500 degrees C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5 nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550 degrees C and post-irradiation annealing at 600 degrees C, which also leads to the observation of room temperature visible photoluminescence.

引用

页数：6

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