The evolution of the structure of amorphous carbon (a-C) films during deposition and thermal annealing is of significant interest from both the materials science and application perspectives. However, despite the voluminous literature of studies dealing with the deposition and physical properties of a-C films, basic understanding of the structure evolution due to phase change during film growth and heating is fairly sparse and empirical, presumably due to the lack of high-resolution instruments that can probe structural changes at the atomic and molecular levels in real time. Molecular dynamics (MD) is a powerful computational method for studying atomic/molecular-scale movement and interactions. Thus, the objective of this study was to perform MD simulations that provide insight into changes in the structure of ultrathin a-C films during deposition and annealing. Simulation results reveal a multi-layer film structure, even for a-C films as thin as similar to 20 angstrom, the existence of a deposition energy that yields a-C films with the highest sp(3) content, the transient and steady-state stages of the structure evolution during annealing at different temperatures, and the changes in the hybridization state (mainly in the bulk layer) encountered during annealing at elevated temperatures. The MD results of this study are of particular importance to applications where the deposition conditions and operation temperature affect the structure and, in turn, the physical properties of ultrathin a-C films used as protective overcoats.
机构:
Beijing Jiaotong Univ, Sch Mech Elect & Control Engn, Beijing 100044, Peoples R ChinaBeijing Jiaotong Univ, Sch Mech Elect & Control Engn, Beijing 100044, Peoples R China
Lan, Huiqing
Kang, Zhengling
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Navy Logist Inst Technol & Equipment, Beijing 100072, Peoples R ChinaBeijing Jiaotong Univ, Sch Mech Elect & Control Engn, Beijing 100044, Peoples R China
机构:
Comis Nacl Energia Atom, Dept Fis, RA-1650 Buenos Aires, DF, Argentina
Univ Nacl San Martin, Escuela Ciencia & Tecnol, RA-1650 Buenos Aires, DF, ArgentinaComis Nacl Energia Atom, Dept Fis, RA-1650 Buenos Aires, DF, Argentina
Halac, E. B.
Burgos, E.
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Comis Nacl Energia Atom, Dept Fis, RA-1650 Buenos Aires, DF, Argentina
Consejo Nacl Invest Cient & Tecn, RA-1033 Buenos Aires, DF, ArgentinaComis Nacl Energia Atom, Dept Fis, RA-1650 Buenos Aires, DF, Argentina
机构:
Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R ChinaXiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R China
Mao, Yuliang
Mao, Xin
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Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R ChinaXiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R China
Mao, Xin
Zhao, Hongquan
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Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 401120, Peoples R ChinaXiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R China
Zhao, Hongquan
Zhang, Nandi
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Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R ChinaXiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R China
Zhang, Nandi
Shi, Xuan
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Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 401120, Peoples R ChinaXiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R China
Shi, Xuan
Yuan, Jianmei
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Xiangtan Univ, Sch Math & Computat Sci, Hunan Key Lab Computat & Simulat Sci & Engn, Xiangtan 411105, Hunan, Peoples R ChinaXiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R China