Noise fluctuation changes related to edge deletion of thin-film Cu(In,Ga)Se2 solar cells

被引：0

作者：

Skvarenina, L. ^{[1
]}

Macku, R. ^{[1
]}

Skarvada, P. ^{[1
]}

Gajdos, A. ^{[1
]}

Sikula, J. ^{[1
]}

机构：

[1] Brno Univ Technol, Fac Elect Engn & Commun, Brno, Czech Republic

来源：

2017 INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF) | 2017年

关键词：

CIGS; defects; 1/f noise; low-frequency noise; dark current-voltage; SEM; electroluminescence; lock-in thermography; LOCK-IN THERMOGRAPHY; SHUNTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-frequency noise and I-V characteristics of reverse-biased thin-film chalcopyrite CIGS solar cell with a metal wrap through architecture were measured in order to evaluate the efficiency of edge deletion by a fine grinding and polishing. These electrical measurements were supplemented by a microscale exploration of the edges, electroluminescence mapping, and lock-in IR thermography. Research efforts are related to the local technological as well as purposely induced structure defects investigation.

引用

页数：4

共 20 条

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