The effects of plasma exposure on low-k dielectric materials

被引：3

作者：

Shohet, J. L. ^{[1
]}

Ren, H. ^{[1
]}

Nichols, M. T. ^{[1
]}

Sinha, H. ^{[1
]}

Lu, W. ^{[1
]}

Mavrakakis, K. ^{[1
]}

Lin, Q. ^{[2
]}

Russell, N. M. ^{[3
]}

Tomoyasu, M. ^{[3
]}

Antonelli, G. A. ^{[4
]}

Engelmann, S. U. ^{[2
]}

Fuller, N. C. ^{[2
]}

Ryan, V. ^{[5
]}

Nishi, Y. ^{[6
]}

机构：

[1] Univ Wisconsin, Dept Elect & Comp Engrg, 1415 Engn Dr, Madison, WI 53706 USA

[2] IBM Watson Res Ctr, Yorktown Hts, NY 10598 USA

[3] Tokyo Electron Ltd, Albany, NY 12203 USA

[4] Novellus Syst, Tualatin, OR 97062 USA

[5] GLOBALFOUNDRIES, Albany, NY 12203 USA

[6] Stanford Univ, Stanford, CA 94305 USA

来源：

ADVANCED ETCH TECHNOLOGY FOR NANOPATTERNING | 2012年 / 8328卷

基金：

美国国家科学基金会;

关键词：

plasma processing; low-k dielectrics; defects; charging; time-dependent dielectric breakdown; damage; FILMS; DAMAGE; SIO2; UV;

D O I：

10.1117/12.917967

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Plasma-induced damage to low-k dielectric materials can be quantified by separation of the effects of charged-particle bombardment, photon bombardment, and gas-radical flux. For ion and photon bombardment, the spatial location and extent of the damage can be determined. Damage effects from radical flux will be shown to be small. Both SiCOH and photo-programmable low-k (PPLK) dielectrics will be discussed.

引用

页数：16

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