Influence of high hydrostatic pressure-high temperature treatment on defect structure of AlGaAs layers

被引：15

作者：

Bak-Misiuk, J

Adamczewska, J

Domagala, J

Zytkiewicz, ZR

Trela, J

Misiuk, A

Leszczynski, M

Jun, J

Surma, HB

Wnuk, A

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Inst Electron Technol, PL-02668 Warsaw, Poland

[3] Polish Acad Sci, High Pressure Res Ctr, PL-01142 Warsaw, Poland

[4] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 1999年 / 286卷 / 1-2期

关键词：

semiconductors; X-ray diffraction; defect structure; high-pressure treatment;

D O I：

10.1016/S0925-8388(98)01021-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Influence of high pressure-high temperature treatment on structural properties of AlGaAs/GaAs structures was studied by high resolution x-ray diffractometry and photoluminescence techniques. The treatment-induced changes in lattice parameter are explained by relaxation of the misfit strain via creation of misfit dislocations and other extended defects, as well as by diffusion of Al to dislocations. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：279 / 283

页数：5

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[2]

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[3]

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[4] Structural perfection of Czochralski grown silicon crystals annealed above 1500 K under hydrostatic pressure [J].