Low-Temperature, High-Performance InGaZnO Thin-Film Transistors Fabricated by Capacitive Coupled Plasma-Assistant Magnetron Sputtering

被引：23

作者：

Liu, Chang ^{[1
]}

Sun, Ying ^{[1
]}

Qin, Houyun ^{[1
]}

Liu, Yiming ^{[1
]}

Wei, Song ^{[1
]}

Zhao, Yi ^{[1
]}

机构：

[1] Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Jilin, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 03期

基金：

中国国家自然科学基金;

关键词：

Capacitive coupled plasma assistantmagnetron sputtering; low temperature; high performance; a-IGZO; thin film transistors; PACVD;

D O I：

10.1109/LED.2019.2896111

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter demonstrates a novel approach to fabricate the high-performance a-InGaZnO thin-film transistors via using the capacitive coupled plasma-assistant magnetron sputtering with low post annealing temperature (100 degrees C). The influence of radio frequency generated plasma power during the a-InGaZnO deposition has been intensively investigated. With the plasma-assistant magnetron sputtering at room temperature, the best thin-film transistor exhibits a high mobility of 26.03 cm(2)/Vs, a threshold voltage of 2 V, a subthreshold swing of 0.33 V/decade, and I-ON/I-OFF of more than 10(7). The proposed capacitive coupled plasma-assistant magnetron sputtering fabrication process in this letter could be a potential approach to be applied for the flexible electronic devices.

引用

页码：415 / 418

页数：4

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