Low-Temperature, High-Performance InGaZnO Thin-Film Transistors Fabricated by Capacitive Coupled Plasma-Assistant Magnetron Sputtering

被引：23
|
作者：
Liu, Chang [1 ]
Sun, Ying [1 ]
Qin, Houyun [1 ]
Liu, Yiming [1 ]
Wei, Song [1 ]
Zhao, Yi [1 ]
机构：
[1] Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Jilin, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Capacitive coupled plasma assistantmagnetron sputtering; low temperature; high performance; a-IGZO; thin film transistors; PACVD;
D O I：
10.1109/LED.2019.2896111
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter demonstrates a novel approach to fabricate the high-performance a-InGaZnO thin-film transistors via using the capacitive coupled plasma-assistant magnetron sputtering with low post annealing temperature (100 degrees C). The influence of radio frequency generated plasma power during the a-InGaZnO deposition has been intensively investigated. With the plasma-assistant magnetron sputtering at room temperature, the best thin-film transistor exhibits a high mobility of 26.03 cm(2)/Vs, a threshold voltage of 2 V, a subthreshold swing of 0.33 V/decade, and I-ON/I-OFF of more than 10(7). The proposed capacitive coupled plasma-assistant magnetron sputtering fabrication process in this letter could be a potential approach to be applied for the flexible electronic devices.
引用
收藏
页码：415 / 418
页数：4
相关论文
共 50 条
  • [31] Low-Temperature, Solution-Processed and Alkali Metal Doped ZnO for High-Performance Thin-Film Transistors
    Park, Si Yun
    Kim, Beom Joon
    Kim, Kyongjun
    Kang, Moon Sung
    Lim, Keon-Hee
    Lee, Tae Il
    Myoung, Jae M.
    Baik, Hong Koo
    Cho, Jeong Ho
    Kim, Youn Sang
    ADVANCED MATERIALS, 2012, 24 (06) : 834 - 838
  • [32] High-performance Semitransparent a-InGaZnO4 Thin-film Transistors Using Thin Al Electrodes
    Ahn, Jeung Sun
    Lee, Kwang Bae
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 57 (05) : 1244 - 1247
  • [33] One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature
    Wang, Chunlan
    Li, Yuqing
    Jin, Yebo
    Guo, Gangying
    Song, Yongle
    Huang, Hao
    He, Han
    Wang, Aolin
    NANOMATERIALS, 2022, 12 (19)
  • [34] Low substrate temperature fabrication of high-performance metal oxide thin-film by magnetron sputtering with target self-heating
    Yang, W. F.
    Liu, Z. G.
    Wu, Z. Y.
    Hong, M. H.
    Wang, C. F.
    Lee, Alex Y. S.
    Gong, H.
    APPLIED PHYSICS LETTERS, 2013, 102 (11)
  • [35] High-performance polycrystalline silicon thin-film transistors with low trap density at the gate-SiO2/Si interface fabricated by low-temperature process
    Abe, Daisuke
    Inoue, Satoshi
    Shimoda, Tatsuya
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (12): : 9066 - 9068
  • [36] High-performance polycrystalline silicon thin-film transistors with low trap density at the Gate-SiO2/Si interface fabricated by low-temperature process
    Abe, Daisuke
    Inoue, Satoshi
    Shimoda, Tatsuya
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (12): : 9066 - 9068
  • [37] Zinc oxide thin-film transistors fabricated via low-temperature hydrothermal method
    Wang, Jyh-Liang
    Yang, Po-Yu
    Juang, Miin-Horng
    Hsieh, Tsang-Yen
    Hwang, Chuan-Chou
    Juan, Chuan-Ping
    Lee, I-Che
    SURFACE & COATINGS TECHNOLOGY, 2013, 231 : 428 - 432
  • [38] Fabrication of high-performance InGaZnOx thin film transistors based on control of oxidation using a low-temperature plasma
    Takenaka, Kosuke
    Endo, Masashi
    Uchida, Giichiro
    Setsuhara, Yuichi
    APPLIED PHYSICS LETTERS, 2018, 112 (15)
  • [39] Indium Oxide Thin-Film Transistors Fabricated by RF Sputtering at Room Temperature
    Noh, Joo Hyon
    Ryu, Seung Yoon
    Jo, Sung Jin
    Kim, Chang Su
    Sohn, Sung-Woo
    Rack, Philip D.
    Kim, Dong-Joo
    Baik, Hong Koo
    IEEE ELECTRON DEVICE LETTERS, 2010, 31 (06) : 567 - 569
  • [40] Low-Temperature-Processed SiInZnO Thin-Film Transistor Fabricated by Radio Frequency Magnetron Sputtering
    Kim B.K.
    Lee S.Y.
    Transactions on Electrical and Electronic Materials, 2018, 19 (3) : 218 - 221
12345