Low-Temperature, High-Performance InGaZnO Thin-Film Transistors Fabricated by Capacitive Coupled Plasma-Assistant Magnetron Sputtering

被引：23
|
作者：
Liu, Chang [1 ]
Sun, Ying [1 ]
Qin, Houyun [1 ]
Liu, Yiming [1 ]
Wei, Song [1 ]
Zhao, Yi [1 ]
机构：
[1] Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Jilin, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Capacitive coupled plasma assistantmagnetron sputtering; low temperature; high performance; a-IGZO; thin film transistors; PACVD;
D O I：
10.1109/LED.2019.2896111
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter demonstrates a novel approach to fabricate the high-performance a-InGaZnO thin-film transistors via using the capacitive coupled plasma-assistant magnetron sputtering with low post annealing temperature (100 degrees C). The influence of radio frequency generated plasma power during the a-InGaZnO deposition has been intensively investigated. With the plasma-assistant magnetron sputtering at room temperature, the best thin-film transistor exhibits a high mobility of 26.03 cm(2)/Vs, a threshold voltage of 2 V, a subthreshold swing of 0.33 V/decade, and I-ON/I-OFF of more than 10(7). The proposed capacitive coupled plasma-assistant magnetron sputtering fabrication process in this letter could be a potential approach to be applied for the flexible electronic devices.
引用
收藏
页码：415 / 418
页数：4
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