Low-Temperature, High-Performance InGaZnO Thin-Film Transistors Fabricated by Capacitive Coupled Plasma-Assistant Magnetron Sputtering

被引：25

作者：

Liu, Chang ^{[1
]}

Sun, Ying ^{[1
]}

Qin, Houyun ^{[1
]}

Liu, Yiming ^{[1
]}

Wei, Song ^{[1
]}

Zhao, Yi ^{[1
]}

机构：

[1] Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Jilin, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 03期

基金：

中国国家自然科学基金;

关键词：

Capacitive coupled plasma assistantmagnetron sputtering; low temperature; high performance; a-IGZO; thin film transistors; PACVD;

D O I：

10.1109/LED.2019.2896111

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter demonstrates a novel approach to fabricate the high-performance a-InGaZnO thin-film transistors via using the capacitive coupled plasma-assistant magnetron sputtering with low post annealing temperature (100 degrees C). The influence of radio frequency generated plasma power during the a-InGaZnO deposition has been intensively investigated. With the plasma-assistant magnetron sputtering at room temperature, the best thin-film transistor exhibits a high mobility of 26.03 cm(2)/Vs, a threshold voltage of 2 V, a subthreshold swing of 0.33 V/decade, and I-ON/I-OFF of more than 10(7). The proposed capacitive coupled plasma-assistant magnetron sputtering fabrication process in this letter could be a potential approach to be applied for the flexible electronic devices.

引用

页码：415 / 418

页数：4

共 16 条

[1] Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin -Film Transistors [J].

Abliz, Ablat ;

Gao, Qingguo ;

Wan, Da ;

Liu, Xingqiang ;

Xu, Lei ;

Liu, Chuansheng ;

Jiang, Changzhong ;

Li, Xuefei ;

Chen, Huipeng ;

Guo, Tailiang ;

Li, Jinchai ;

Liao, Lei .

ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (12) :10798-10804

[2] Transparent BCN coatings by RF PACVD at low temperature using metallo-organic precursors [J].

Ahn, H ;

Alberts, L ;

Wöhle, J ;

Rie, KT .

SURFACE & COATINGS TECHNOLOGY, 2001, 142 :894-898

[3] Low-temperature (150°C) activation of Ar+O2+H2-sputtered In-Ga-Zn-O for thin-film transistors [J].

Aman, S. G. Mehadi ;

Magari, Yusaku ;

Shimpo, Kenta ;

Hirota, Yuya ;

Makino, Hisao ;

Koretomo, Daichi ;

Furuta, Mamoru .

APPLIED PHYSICS EXPRESS, 2018, 11 (08)

[4] High-Performance a-IGZO Thin-Film Transistor Using Ta2O5 Gate Dielectric [J].

Chiu, C. J. ;

Chang, S. P. ;

Chang, S. J. .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (11) :1245-1247

[5] Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films [J].

Chou, Chia-Man ;

Lai, Chih-Chang ;

Chang, Chih-Wei ;

Wen, Kai-Shin ;

Hsiao, Vincent K. S. .

AIP ADVANCES, 2017, 7 (07)

[6] Carbon-encapsulated metal nanoparticles deposited by plasma enhanced magnetron sputtering [J].

Dai, Wei ;

Moon, M. W. .

VACUUM, 2018, 150 :124-128

[7] Past and Future Technology for Mixed Signal LSI [J].

Hatasako, Kenichi ;

Nitta, Tetsuya ;

Hane, Masami ;

Maegawa, Shigeto .

IEICE TRANSACTIONS ON ELECTRONICS, 2014, E97C (04) :238-244

[8] Effect of Post-Deposition Annealing on the Structural, Optical and Electrical Properties of IGZO Films [J].

Jeon, Jae-Hyun ;

Gong, Tae-Kyung ;

Kong, Young-Min ;

Lee, Hak Min ;

Kim, Daeil .

ELECTRONIC MATERIALS LETTERS, 2015, 11 (03) :481-484

[9] High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel [J].

Jeong, Jae Kyeong ;

Jeong, Jong Han ;

Yang, Hui Won ;

Park, Jin-Seong ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

APPLIED PHYSICS LETTERS, 2007, 91 (11)

[10] Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J].

Kang, Donghun ;

Lim, Hyuck ;

Kim, Changjung ;

Song, Ihun ;

Park, Jaechoel ;

Park, Youngsoo ;

Chung, JaeGwan .

APPLIED PHYSICS LETTERS, 2007, 90 (19)

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