Improved Performance of 1.3-μm Multilayer P-Doped InAs/InGaAs Quantum Dot Lasers Using Rapid Thermal Annealing

被引：3

作者：

Cao, Qi ^{[1
]}

Tong, Cunzhu ^{[1
]}

Yoon, Soon Fatt ^{[1
]}

Liu, Chongyang ^{[1
]}

Ngo, Chun Yong ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2012年 / 11卷 / 02期

关键词：

Defect; p-doped; quantum dot (QD) laser; thermal annealing; AUGER RECOMBINATION; TEMPERATURE-DEPENDENCE; A-WELL; INTERDIFFUSION;

D O I：

10.1109/TNANO.2010.2068558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Significant improvements in the performance of pdoped ten-layer InAs/InGaAs quantum dot laser are demonstrated using rapid thermal annealing at 600 degrees C. The annealed laser shows about 2.7 times increase in the saturated output power and external differential quantum efficiency without obvious wavelength shift. Decrease in internal loss of 2.9 cm(-1) and improvement in the threshold current by 23% are achieved. Defect reduction is thought to be the most likely mechanism contributing to the improved performance according to the electroluminescence and improved characteristic temperature behavior.

引用

页码：231 / 235

页数：5

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