Effects of interface number on the temperature and frequency dependence of the properties of Pb(Zr0.52Ti0.48)O3/Ba(Mg1/3Ta2/3)O3 thin films

被引：1
作者：
Wu, Zhi [1 ]
Chen, Wen [2 ]
Zhou, Jing [2 ]
Shen, Jie [2 ]
机构：
[1] Hunan Inst Technol, Sch Mat & Chem Engn, Hengyang 421002, Peoples R China
[2] Wuhan Univ Technol, Sch Mat Sci & Engn, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R China
来源：
THIN SOLID FILMS | 2018年 / 652卷
基金：
中国国家自然科学基金;
关键词：
Interfaces; Multilayers; Temperature dependence; Frequency dependence; Remanent polarization; Sol-gel deposition; Lead zirconate titanate; Barium magnesium tantalate; MICROWAVE DIELECTRIC-PROPERTIES; STACKING LAYERS;
D O I：
10.1016/j.tsf.2017.11.013
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, PbZr0.52Ti0.48O3 (PZT) and Ba(Mg1/3Ta2/3)O-3 (BMT) thin films were prepared by sol-gel method and aqueous solution-gel method, respectively. PZT/BMT thin films with different interface numbers were prepared and the effects of interface number on the temperature and frequency dependence of PZT/BMT thin films were investigated. The interface number can improve the temperature stability of PZT/BMT thin films in the 85 to 205 degrees C range. As the temperature increases, there is an increase in the remanent polarization for the PZT/BMT thin films and the increasing rate of the remanent polarization decreases with the increase of interface number. As the frequency increases, the remanent polarization for the PZT/BMT thin films decreases and the decline rate of remanent polarization slows with the interface number increasing, indicating that interface number can improve the frequency stability of PZT/BMT thin films.
引用
收藏
页码：23 / 27
页数：5
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