Off-axis electron holographic potential mapping across AlGaAs/AlAs/GaAs heterostructures

被引：7

作者：

Chung, Suk ^{[1
]}

Johnson, Shane R. ^{[2
]}

Zhang, Yong-Hang ^{[2
]}

Smith, David J. ^{[3
]}

McCartney, Martha R. ^{[3
]}

机构：

[1] Arizona State Univ, Sch Mat, Tempe, AZ 85287 USA

[2] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[3] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 01期

关键词：

FIELD-EFFECT TRANSISTORS; MOLECULAR-BEAM EPITAXY; CARRIER DEPLETION; GAAS; REGROWTH;

D O I：

10.1063/1.3062449

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrostatic potential profile across AlGaAs/AlAs/GaAs heterostructures containing 1-mu m-thick n-doped (or p-doped) AlGaAs layers is measured using off-axis electron holography. Simulations of the potential profiles assuming no unintentional impurities in the undoped regions of the samples show small discrepancies with experiment. Revised simulations reproduce the measurements accurately, when a p-layer with an 8.4 x 10(11) cm(-2) acceptor density is included at the buffer/substrate interface to simulate the presence of unintentional carbon impurities. c 2009 American Institute of Physics. [DOI: 10.1063/1.3062449]

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页数：4

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