A better hot-carrier-induced degradation monitor for several typical device parameters of pMOSFET's

被引：0

作者：

Zhang, JC ^{[1
]}

Hao, Y ^{[1
]}

Zhu, ZW ^{[1
]}

机构：

[1] Xidian Univ, Inst Microelect, Xian 710071, Peoples R China

来源：

SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS | 2001年

关键词：

pMOSFET's; hot-carrier-induced; degradation; degradation monitor;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

According to a lot of experimental studies, a better hot-carrier-induced degradation monitor of pMOSFET's is proposed in this paper. Utilizing the new degradation monitor, a new unified model for degradation simulation and lifetime prediction of pMOSFET's is built. Comparison between simulation and measured results shows the new degradation model has a higher accuracy and a wider application range.

引用

页码：1017 / 1020

页数：4