Bipolar Resistive Switching Characteristics of TiN/HfOx/ITO Devices for Resistive Random Access Memory Applications

被引：14
|
作者：
Tan Ting-Ting [1 ]
Chen Xi [1 ]
Guo Ting-Ting [1 ]
Liu Zheng-Tang [1 ]
机构：
[1] Northwestern Polytech Univ, Sch Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2013年 / 30卷 / 10期
基金：
中国国家自然科学基金;
关键词：
HFO2; FILMS; TRANSITION;
D O I：
10.1088/0256-307X/30/10/107302
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Resistive switching characteristics of hafnium oxide are studied for possible nonvolatile memory device applications. The HfOx films with different oxygen contents are deposited by rf magnetron sputtering under different O-2 flow rates. The films are amorphous, and the stoichiometric of the film is improved by increasing the O-2 flow rate. Current-voltage characteristics of the TiN/HfOx/ITO device are investigated with 1 mA compliance. The bipolar resistive switching behavior is observed for the TiN/HfOx/ITO structure, and the resistive switching mechanism of the TiN/HfOx/ITO structure is explained by trap-controlled space charge limit current conduction.
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页数：4
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