Highly textured ZnO:B films grown by low pressure chemical vapor deposition for efficiency enhancement of heterojunction silicon-based solar cells

被引：19

作者：

Hsiao, Jui-Chung ^{[1
,2
,3
]}

Chen, Chien-Hsun ^{[3
]}

Yang, Hung-Jen ^{[4
]}

Wu, Chien-Liang ^{[3
]}

Fan, Chia-Ming ^{[3
]}

Huang, Chien-Fu ^{[3
]}

Lin, Chao-Cheng ^{[3
]}

Yu, Peichen ^{[1
,2
]}

Hwang, Jenn-Chang ^{[4
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

[3] Ind Technol Res Inst, Green Energy & Environm Res Labs, Hsinchu 30010, Taiwan

[4] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

来源：

JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS | 2013年 / 44卷 / 05期

关键词：

ZnO:B; Heterojunction solar cell; Low-pressure chemical-vapor-deposition; TRANSPARENT CONDUCTIVE OXIDE; TEMPERATURE;

D O I：

10.1016/j.jtice.2013.01.027

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

This paper demonstrates the growth of highly-textured boron-doped ZnO (ZnO:B) film by using low-pressure chemical-vapor-deposition (LPCVD) for efficient light harvesting and carrier collection in heterojunction silicon-based (HJS) solar cells. The optical and electrical characteristics have been optimized versus the substrate temperature and B2H6 flow rate for tradeoffs among the sheet resistance, free-carrier absorption, and optical transmission of blue/green wavelengths. A HJS solar cell with a 1.6-mu m-thick ZnO:B film achieves a high power conversion efficiency of 16.30% and fill factor of 78.05%, compared to 15.64% and 72.17%, respectively, from a counterpart with a conventional 80-nm-thick indium tin oxide layer. (C) 2013 Taiwan Institute of Chemical Engineers. Published by Elsevier B.V. All rights reserved.

引用

页码：758 / 761

页数：4

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