Highly textured ZnO:B films grown by low pressure chemical vapor deposition for efficiency enhancement of heterojunction silicon-based solar cells

被引：19

作者：

Hsiao, Jui-Chung ^{[1
,2
,3
]}

Chen, Chien-Hsun ^{[3
]}

Yang, Hung-Jen ^{[4
]}

Wu, Chien-Liang ^{[3
]}

Fan, Chia-Ming ^{[3
]}

Huang, Chien-Fu ^{[3
]}

Lin, Chao-Cheng ^{[3
]}

Yu, Peichen ^{[1
,2
]}

Hwang, Jenn-Chang ^{[4
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

[3] Ind Technol Res Inst, Green Energy & Environm Res Labs, Hsinchu 30010, Taiwan

[4] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

来源：

JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS | 2013年 / 44卷 / 05期

关键词：

ZnO:B; Heterojunction solar cell; Low-pressure chemical-vapor-deposition; TRANSPARENT CONDUCTIVE OXIDE; TEMPERATURE;

D O I：

10.1016/j.jtice.2013.01.027

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

This paper demonstrates the growth of highly-textured boron-doped ZnO (ZnO:B) film by using low-pressure chemical-vapor-deposition (LPCVD) for efficient light harvesting and carrier collection in heterojunction silicon-based (HJS) solar cells. The optical and electrical characteristics have been optimized versus the substrate temperature and B2H6 flow rate for tradeoffs among the sheet resistance, free-carrier absorption, and optical transmission of blue/green wavelengths. A HJS solar cell with a 1.6-mu m-thick ZnO:B film achieves a high power conversion efficiency of 16.30% and fill factor of 78.05%, compared to 15.64% and 72.17%, respectively, from a counterpart with a conventional 80-nm-thick indium tin oxide layer. (C) 2013 Taiwan Institute of Chemical Engineers. Published by Elsevier B.V. All rights reserved.

引用

页码：758 / 761

页数：4

共 22 条

[1]

Choong G, 2010, P 25 EUR PHOT SOL EN

[2] High throughput via-metallization technique for multi-crystalline metal wrap through (MWT) silicon solar cells exceeding 16% efficiency [J].

Clement, Florian ;

Menkoe, Michael ;

Erath, Denis ;

Kubera, Tim ;

Hoenig, Rene ;

Kwapil, Wolfram ;

Wolke, Winfried ;

Biro, Daniel ;

Preu, Ralf .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 94 (01) :51-56

[3] Surface passivation and heterojunction cells on Si (100) and (111) wafers using dc and rf plasma deposited Si:H thin films [J].

Das, U. K. ;

Burrows, M. Z. ;

Lu, M. ;

Bowden, S. ;

Birkmire, R. W. .

APPLIED PHYSICS LETTERS, 2008, 92 (06)

[4] Boron-doped zinc oxide layers grown by metal-organic CVD for silicon heterojunction solar cells applications [J].

Favier, A. ;

Munoz, D. ;

de Nicolas, S. Martin ;

Ribeyron, P-J .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (04) :1057-1061

[5] Polycrystalline ZnO: B grown by LPCVD as TCO for thin film silicon solar cells [J].

Fay, Sylvie ;

Steinhauser, Jerome ;

Nicolay, Sylvain ;

Ballif, Christophe .

THIN SOLID FILMS, 2010, 518 (11) :2961-2966

[6] Optimization of interface structures in crystalline silicon heterojunction solar cells [J].

Fujiwara, Hiroyuki ;

Kaneko, Tetsuya ;

Kondo, Michio .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2009, 93 (6-7) :725-728

[7]

Guillevin N, 2010, 25 EU PVSEC 2010

[8] Influence of different dielectrics on the first layer grain sizes and its effect on the mobility of pentacene-based thin-film transistors [J].

Hu, Yuanyuan ;

Qi, Qiong ;

Jiang, Chao .

APPLIED PHYSICS LETTERS, 2010, 96 (13)

[9] Nitride-based LEDs fabricated on ZnO-buffered sapphire substrates [J].

Huang, Jenn-Bin ;

Nam Giang Nguyen ;

Chou, Chia-Hui ;

Wei, Shih-Syuan ;

Hong, Lu-Sheng .

JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS, 2012, 43 (04) :638-643

[10] Effects of ITO precursor thickness on transparent conductive Al doped ZnO film for solar cell applications [J].

Kang, Dong-Won ;

Kuk, Seung-Hee ;

Ji, Kwang-Sun ;

Lee, Heon-Min ;

Han, Min-Koo .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (01) :138-141

← 1 2 3 →