Understanding the impact of C60 at the interface of perovskite solar cells via drift-diffusion modeling

被引：51

作者：

Golubev, Timofey ^{[1
]}

Liu, Dianyi ^{[2
]}

Lunt, Richard ^{[1
,2
]}

Duxbury, Phillip ^{[1
]}

机构：

[1] Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48824 USA

[2] Michigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA

来源：

AIP ADVANCES | 2019年 / 9卷 / 03期

关键词：

CHARGE ACCUMULATION; ELECTRON-TRANSPORT; V CURVES; LAYER; EMERGENCE; SHAPE;

D O I：

10.1063/1.5068690

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Perovskite solar cells have recently seen rapid improvements in performance with certified efficiencies of above 23%. Fullerene compounds are a very popular electron-transfer material in these devices. In a previous report, it has been shown that while an ultrathin fullerene layer of just 1 nm is sufficient to achieve good device performance, removal of this layer causes a drastic decrease in performance. We provide an explanation to these observed effects by use of a numerical device model. This work provides theoretical support to the experimental understanding of the dominant role of fullerenes in perovskite solar cells. (C) 2019 Author(s).

引用

页数：6

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