High-performance Bi0.5Na0.5TiO3 single crystals grown by high-oxygen-pressure flux method

被引：67

作者：

Yamamoto, Katsuya ^{[1
]}

Suzuki, Muneyasu ^{[1
]}

Noguchi, Yuji ^{[1
]}

Miyayama, Masaru ^{[1
]}

机构：

[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 09期

关键词：

bismuth sodium titanate; single crystal defect; ferroelectric; piezoelectric; Pb-free; oxygen vacancy; domain;

D O I：

10.1143/JJAP.47.7623

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-Po-2 (oxygen pressure) crystal growth is developed for Bi0.5Na0.5TiO3 single crystals based on defect chemistry at high temperatures. Thermogravimetric analysis shows that the vacancy formations of Bi and O at high temperatures are controlled by the suface reaction (oxygen desorption), which is suppressed at a higher Po-2, Bi0.5Na0.5TiO3 crystal grown at a Po-2 of 1 MPa exhihit a satureated remanent polarization of 44 mu C/cm(2) along [110](cubic), suggesting a spontaneous polarization of 54 mu C/cm(2) along [111](cubic) (polar direction) of rhombohedral Bi0.5Na0.5TiO3. High-Po-2 heat treatments are proposed to be effective for fabricating high-quality and high-performance ferroelectric/piezoelectric devices using Bi-based ferroelectric oxides.

引用

页码：7623 / 7629

页数：7

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