Compositional dependence of the absorption edge and dark currents in Ge1-x-ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4

被引：37

作者：

Beeler, R. T. ^{[1
]}

Xu, Chi ^{[2
]}

Smith, D. J. ^{[2
]}

Grzybowski, G. ^{[1
]}

Menendez, J. ^{[2
]}

Kouvetakis, J. ^{[1
]}

机构：

[1] Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA

[2] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 22期

基金：

美国国家科学基金会;

关键词：

SEMICONDUCTORS; GE; SI(100); DEVICES; ALLOYS;

D O I：

10.1063/1.4768217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lattice-matched Ge1-x-ySixSny (x <= 0.2, y <= 0.05) alloys were deposited defect-free on Ge(001) substrates via low-temperature (330-290 degrees C) reactions of Ge4H10, Si4H10 and SnD4 hydrides, and used to fabricate pin photodetectors. The growth is carried out under gas-source molecular beam epitaxy conditions in a specially designed single-wafer reactor. Optical responsivity measurements reveal absorption edges between 0.88 eV and 0.98 eV, which are used to determine the compositional dependence of the direct band gap. A study of the I-V characteristics of the diodes shows that the dark current is very weakly correlated with the number of Si-Sn bonds in the alloy. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768217]

引用

页数：5

共 20 条

[1] Synthesis of ternary SiGeSn semiconductors on Si(100) via SnxGe1-x buffer layers [J].

Bauer, M ;

Ritter, C ;

Crozier, PA ;

Ren, J ;

Menendez, J ;

Wolf, G ;

Kouvetakis, J .

APPLIED PHYSICS LETTERS, 2003, 83 (11) :2163-2165

[2] GeSiSn Photodiodes With 1eV Optical Gaps Grown on Si(100) and Ge(100) Platforms [J].

Beeler, Richard T. ;

Smith, David J. ;

Kouvetakis, John ;

Menendez, Jose .

IEEE JOURNAL OF PHOTOVOLTAICS, 2012, 2 (04) :434-440

[3] Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors [J].

D'Costa, V. R. ;

Fang, Y. -Y. ;

Tolle, J. ;

Kouvetakis, J. ;

Menendez, J. .

THIN SOLID FILMS, 2010, 518 (09) :2531-2537

[4] Tunable Optical Gap at a Fixed Lattice Constant in Group-IV Semiconductor Alloys [J].

D'Costa, V. R. ;

Fang, Y. -Y. ;

Tolle, J. ;

Kouvetakis, J. ;

Menendez, J. .

PHYSICAL REVIEW LETTERS, 2009, 102 (10)

[5] Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L-telecommunication bands [J].

D'Costa, Vijay R. ;

Fang, Yanyan ;

Mathews, Jay ;

Roucka, Radek ;

Tolle, John ;

Menendez, Jose ;

Kouvetakis, John .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (11)

[6] ALGORITHMS FOR THE RAPID SIMULATION OF RUTHERFORD BACKSCATTERING SPECTRA [J].

DOOLITTLE, LR .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 9 (03) :344-351

[7] Molecular-Based Synthetic Approach to New Group IV Materials for High-Efficiency, Low-Cost Solar Cells and Si-Based Optoelectronics [J].

Fang, Yan-Yan ;

Xie, Junqi ;

Tolle, John ;

Roucka, Radek ;

D'Costa, Vijay R. ;

Chizmeshya, Andrew V. G. ;

Menendez, Jose ;

Kouvetakis, John .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2008, 130 (47) :16095-16102

[8]

Friedman DJ, 2002, PHOT SPEC C 29 IEEE

[9] Photocurrent of 1 eV GaInNAs lattice-matched to GaAs [J].

Geisz, JF ;

Friedman, DJ ;

Olson, JM ;

Kurtz, SR ;

Keyes, BM .

JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :401-408

[10] Ultra-Low-Temperature Epitaxy of Ge-based Semiconductors and Optoelectronic Structures on Si(100): Introducing Higher Order Germanes (Ge3H8, Ge4H10) [J].

Grzybowski, Gordon ;

Jiang, Liying ;

Beeler, Richard T. ;

Watkins, Tylan ;

Chizmeshya, Andrew V. G. ;

Xu, Chi ;

Menendez, Jose ;

Kouvetakis, John .

CHEMISTRY OF MATERIALS, 2012, 24 (09) :1619-1628

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