Effect of lattice mismatch on surface morphology of InAs quantum dots on (100) In1-xAlxAs/InP

被引：17

作者：

Koo, BH ^{[1
]}

Hanada, T ^{[1
]}

Makino, H ^{[1
]}

Yao, T ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 26期

关键词：

D O I：

10.1063/1.1428763

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the results of the formation of the InAs quantum dots (QDs) on the (100) In1-xAlxAs(InAlAs)/InP substrate by using relaxed InAlAs buffer layers with different compositions. Variations of surface morphology of InAs QDs as a function of InAs-InAlAs lattice mismatch have been evaluated by atomic force microscopy. When the lattice mismatch increases from 2.4% to 4.2%, the size of QDs decreases, and the density of QDs increases. Each of these dependences can be fitted to a power function of the misfit unless the Al diffusion, roughness of the buffer layer, and/or the ripening of small dots modify the size and density. (C) 2001 American Institute of Physics.

引用

页码：4331 / 4333

页数：3

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