Room-temperature electroluminescence from germanium in an Al0.3Ga0.7As/Ge heterojunction light-emitting diode by Γ-valley transport

被引：14

作者：

Cho, Seongjae ^{[1
]}

Park, Byung-Gook ^{[2
]}

Yang, Changjae ^{[3
]}

Cheung, Stanley ^{[4
]}

Yoon, Euijoon ^{[3
,5
]}

Kamins, Theodore I. ^{[1
]}

Ben Yoo, S. J. ^{[4
]}

Harris, James S., Jr. ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr ISRC, Dept Elect Engn & Comp Sci, Seoul 151742, South Korea

[3] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

[4] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA

[5] Seoul Natl Univ, Energy Semicond Res Ctr, Adv Inst Convergence Technol, Grad Sch Convergence Sci & Technol, Suwon 443270, South Korea

来源：

OPTICS EXPRESS | 2012年 / 20卷 / 14期

基金：

美国国家科学基金会; 新加坡国家研究基金会;

关键词：

ENERGY-GAP; ALLOYS;

D O I：

10.1364/OE.20.014921

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-temperature electroluminescence from germanium in an Al0.3Ga0.7As/Ge heterojunction light-emitting diode without any complicated manipulation for alternating material properties of germanium. Electroluminescence peaks were observed near 1550 nm and the energy around this wavelength corresponds to that emitted from direct recombination at the Gamma-valley of germanium. (c) 2012 Optical Society of America

引用

页码：14921 / 14927

页数：7

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