Low-temperature Hall effect in electron-doped superconducting La2-xCexCuO4 thin films

被引：18

作者：

Jin, K. ^{[1
]}

Zhu, B. Y.

Wu, B. X.

Gao, L. J.

Zhao, B. R.

机构：

[1] Chinese Acad Sci, Natl Lab Superconduct, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 17期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1103/PhysRevB.78.174521

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the low-temperature Hall effect in electron-doped La(2-x)Ce(x)CuO(4) thin films from heavily underdoped x=0.06 to heavily overdoped x=0.17. With increasing x, the charge carriers that dominate the Hall effect gradually change from electronlike to holelike. From the Hall coefficient and differential Hall coefficient, we infer that a large holelike Fermi surface forms above x=0.15, that is, the electronlike pocket may exist until x=0.15. Meanwhile, the sign of the Hall resistivity changes from negative (x=0.105) to positive (x=0.12) at 2 K, indicating that single electron pocket exists below x=0.105 at low temperature.

引用

页数：5

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