SOCl2 enhanced photovoltaic conversion of single wall carbon nanotube/n-silicon heterojunctions

被引：63

作者：

Li, Zhongrui ^{[1
]}

Kunets, Vasyl P. ^{[2
]}

Saini, Viney

Xu, Yang

Dervishi, Enkeleda

Salamo, Gregory J. ^{[2
]}

Biris, Alexandru R. ^{[3
]}

Biris, Alexandru S. ^{[1
]}

机构：

[1] Univ Arkansas, Nanotechnol Ctr, Little Rock, AR 72204 USA

[2] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

[3] Natl Inst Res & Dev Isotop & Mol Technol, R-400293 Cluj Napoca, Romania

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 24期

关键词：

carbon nanotubes; carrier density; carrier mobility; electron-hole recombination; elemental semiconductors; Fermi level; p-n heterojunctions; silicon; solar cells; sulphur compounds; thin films;

D O I：

10.1063/1.3050465

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report solar cells based on high-density p-n heterojunctions between single wall carbon nanotubes (SWCNTs) and a n-type silicon wafer. Chemical modification by thionyl chloride of the SWCNT coating films was found to significantly increase the conversion efficiency by more than 45% through adjusting the Fermi level and increasing the carrier concentration and mobility. Electron-hole pairs are optically excited in the numerous heterojunctions formed between SOCl2-treated SWCNTs thin coating and n-type silicon substrate, and then split and transported through SWCNTs (holes) and n-Si (electrons), respectively.

引用

页数：3

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