Properties of the most recent Hamamatsu avalanche photodiode

被引:10
作者
Kirn, T
Musienko, Y
Flugel, T
Renker, D
机构
[1] PAUL SCHERRER INST,VILLIGEN,SWITZERLAND
[2] RHEIN WESTFAL TH AACHEN,INST PHYS 1,D-5100 AACHEN,GERMANY
[3] RUSSIAN ACAD SCI,INST NUCL RES,MOSCOW,RUSSIA
关键词
D O I
10.1016/S0168-9002(96)00989-8
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In a development program Hamamatsu Photonics improved their avalanche photo-diodes significantly. The first milestones, reduction of the so-called nuclear counter effect, the effective thickness contributing to signals from charged particles, without increasing the capacitance, the dark current and the excess noise factor has been achieved. In parallel the radiation hardness against neutron and gamma irradiation has been improved. Results on the most recent prototype will be presented.
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页码:199 / 201
页数:3
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