Temperature-Dependent Characteristics of Ni/Au and Pt/Au Schottky Diodes on β-Ga2O3

被引：84
作者：
Ahn, Shihyun [1 ]
Ren, F. [1 ]
Yuan, L. [2 ]
Pearton, S. J. [2 ]
Kuramata, A. [3 ,4 ]
机构：
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[3] Tamura Corp, Sayama, Saitama 3501328, Japan
[4] Novel Crystal Technol Inc, Sayama, Saitama 3501328, Japan
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2017年 / 6卷 / 01期
关键词：
SOLAR-BLIND PHOTODETECTORS; OXIDE-FILMS; THIN-FILMS; POWER; PERFORMANCE; MOVPE;
D O I：
10.1149/2.0291701jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Schottky diodes were formed on bulk or epitaxial beta-Ga2O3 using Ni/Au or Pt/Au and the electrical characteristics measured as a function of temperature in the range 25-200 degrees C. The barrier heights were 1.07 eV (Ni/Au) and 1.04 eV (Pt/Au) at 25 degrees C. The barrier heights increased with temperature, while the on-state resistances (R-ON) decreased over the same range. The temperature coefficient of reverse breakdown voltage (VB), beta, was-4 mV/K for Ni/Au and -0.1 mV/K for Pt/Au. The figure-of-merit (VB2/RON) was above 3 MW. cm(-2) at 25 degrees C for Ni/Au diodes and was still similar to 1 MW. cm(-2) at 200 degrees C. The reverse recovery times were also measured as a function of temperature and were of the order of 21-28 ns over the range 25-150 degrees C for both epi and bulk diodes. The results show the already high quality of bulk and epitaxial -beta-Ga2O3 and the potential of this material for high temperature power electronics. (C) 2017 The Electrochemical Society. All rights reserved.
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收藏
页码：P68 / P72
页数：5
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