Effect of AACVD Processing Parameters on the Growth of Greenockite (CdS) Thin Films using a Single-Source Cadmium Precursor

被引:43
作者
Ehsan, Muhammad Ali [1 ]
Ming, Huang Nay [2 ]
Misran, Misni [1 ]
Arifin, Zainudin [1 ]
Tiekink, Edward R. T. [1 ]
Safwan, Ahmad P. [1 ]
Ebadi, Mehdi [1 ,3 ]
Basirun, Wan J.
Mazhar, Muhammad [1 ]
机构
[1] Univ Malaya Lembah Pantai, Dept Chem, Fac Sci, Kuala Lumpur 50603, Malaysia
[2] Univ Malaya Lembah Pantai, Dept Phys, Fac Sci, Kuala Lumpur 50603, Malaysia
[3] Islamic Azad Univ, Gorgan Branch, Dept Chem, Fac Sci, Gorgan, Iran
关键词
Cadmium; Nanostructures; S-ligand; Thin films; CHEMICAL-VAPOR-DEPOSITION; STEREOCHEMICAL ASPECTS; MOLECULAR-STRUCTURES; CRYSTAL-STRUCTURE; SULFIDE; COMPLEXES; ZINC; SIZE; 1,10-PHENANTHROLINE; NANOPARTICLES;
D O I
10.1002/cvde.201206988
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Greenockite (CdS) nanostructured thin films are deposited on soda and FTO conducting glass substrates by aerosol-assisted (AA)CVD using a single-source precursor bis-(N,N-dicylcohexyldithiocarbamato)(pyridine)cadmium(II), Cd[S2CNCy2]2.py (1), in pyridine, toluene, and THF solutions in the temperature range 350450?degrees C. The precursor 1, characterized by physicochemical methods, undergoes facile thermal decomposition at 350?degrees C to give a stable residual mass of CdS. The thin films deposited from pyridine solution, and characterized by X-ray diffraction (XRD), UV-vis spectroscopy, field-emission scanning electron microscopy (FESEM), and energy dispersive X-ray (EDX) techniques, exhibit a band gap of 2.4?eV and a photocurrent density of 1.3?mA?cm-2 at 0.4?V versus Ag/AgCl/3M KCl, suggesting their suitability for application in photoelectrochemical (PEC) cells.
引用
收藏
页码:191 / 200
页数:10
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