Nonadiabatic quantum control of a semiconductor charge qubit

被引：56

作者：

Dovzhenko, Y. ^{[1
]}

Stehlik, J. ^{[1
]}

Petersson, K. D. ^{[1
]}

Petta, J. R. ^{[1
]}

Lu, H. ^{[2
]}

Gossard, A. C. ^{[2
]}

机构：

[1] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 16期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevB.84.161302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate multipulse quantum control of a single electron charge qubit. The qubit is manipulated by applying nonadiabatic voltage pulses to a surface depletion gate and readout is achieved using a quantum point-contact charge sensor. We observe Ramsey fringes in the excited-state occupation in response to a pi/2-pi/2 pulse sequence and extract T-2* similar to 60 ps away from the charge degeneracy point. Simulations suggest these results may be extended to implement a charge echo by reducing the interdot tunnel coupling and pulse rise time, thereby increasing the nonadiabaticity of the pulses.

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页数：4

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