Survey of radiation damage measurements in room temperature semiconductor radiation detectors

The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI2) is reviewed and supplemented in the case of CZT by new alpha particle data. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10(10) p/cm(2) and significant bulk leakage after 10(12) p/cm(2). CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5x10(9) p/cm(2) in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum neutrons after fluences up to 10(10) n/cm(2), although activation was evident. Exposures of CZT to 5 MeV alpha particle at fluences up to 1.5x10(10) alpha/cm(2) produced a near linear decrease in peak position with fluence and increases in FWHM beginning at about 7.5x10(9) alpha/cm(2). CT detectors show resolution losses after fluences of 3x10(9) p/cm(2) at 33 MeV for chlorine-doped detectors. Indium doped material may be more resistant. Neutron exposures (8 MeV) caused resolution losses after fluences of 2 x 10(10) n/cm(2) Mercuric iodide has been studied with intermediate energy protons (10 to 33 MeV) at fluences up to 10(12) p/cm(2) and with 1.5 GeV protons at fluences up to 1.2x10(8) p/cm(2). Neutron exposures at 8 MeV have been reported at fluences up to 10(15) n/cm(2) No radiation damage was reported under these irradiation conditions. Leakage current coefficients (alpha) for PIN -silicon devices were found to be linear with fluence for neutron, proton, gamma ray, and electron exposures.