Proton incorporation in yttria-stabilized zirconia during atomic layer deposition

被引:11
|
作者
Bae, Kiho [1 ,2 ]
Son, Kyung Sik [1 ]
Kim, Jun Woo [1 ]
Park, Suk Won [1 ]
An, Jihwan [3 ]
Prinz, Fritz B. [3 ,4 ]
Shim, Joon Hyung [1 ]
机构
[1] Korea Univ, Sch Mech Engn, Seoul 136713, South Korea
[2] Korea Inst Sci & Technol, High Temp Energy Mat Res Ctr, Seoul 136791, South Korea
[3] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA
[4] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
关键词
Protons; Atomic layer deposition; Yttria-stabilized zirconia; Secondary ion mass spectrometry; OXIDE FUEL-CELL; THIN-FILMS; WATER; DEGRADATION;
D O I
10.1016/j.ijhydene.2013.11.023
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This work elucidated the proton-incorporation mechanism in ALD YSZ(1). Isotope (H2O)-H-2 was used as an oxidant to trace proton incorporation. The ratio of ZrO2 to Y2O3 ALD cycles was varied from 1:1 to 5:1. TEM confirmed that the ALD YSZ films grew as fully crystallized columnar grains in the cubic ZrO2 phase. SIMS indicated that the Y3+ and H-2(+) concentrations were linearly correlated, indicating yttria-deposition-induced proton incorporation. XPS confirmed an appreciable amount of Y(OH)(3) proportional to the H-2(+) content in the ALD YSZ, as was also detected by SIMS. Oxide ion vacancies created by the replacement of ZrO2 with relatively small amounts of Y2O3 provided additional vacancies for proton incorporation, resulting in steeper [H-2(+)]/[Y3+] slopes. Copyright (C) 2013, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:2621 / 2627
页数:7
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