Proton incorporation in yttria-stabilized zirconia during atomic layer deposition

被引：13

作者：

Bae, Kiho ^{[1
,2
]}

Son, Kyung Sik ^{[1
]}

Kim, Jun Woo ^{[1
]}

Park, Suk Won ^{[1
]}

An, Jihwan ^{[3
]}

Prinz, Fritz B. ^{[3
,4
]}

Shim, Joon Hyung ^{[1
]}

机构：

[1] Korea Univ, Sch Mech Engn, Seoul 136713, South Korea

[2] Korea Inst Sci & Technol, High Temp Energy Mat Res Ctr, Seoul 136791, South Korea

[3] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

[4] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY | 2014年 / 39卷 / 06期

关键词：

Protons; Atomic layer deposition; Yttria-stabilized zirconia; Secondary ion mass spectrometry; OXIDE FUEL-CELL; THIN-FILMS; WATER; DEGRADATION;

D O I：

10.1016/j.ijhydene.2013.11.023

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This work elucidated the proton-incorporation mechanism in ALD YSZ(1). Isotope (H2O)-H-2 was used as an oxidant to trace proton incorporation. The ratio of ZrO2 to Y2O3 ALD cycles was varied from 1:1 to 5:1. TEM confirmed that the ALD YSZ films grew as fully crystallized columnar grains in the cubic ZrO2 phase. SIMS indicated that the Y3+ and H-2(+) concentrations were linearly correlated, indicating yttria-deposition-induced proton incorporation. XPS confirmed an appreciable amount of Y(OH)(3) proportional to the H-2(+) content in the ALD YSZ, as was also detected by SIMS. Oxide ion vacancies created by the replacement of ZrO2 with relatively small amounts of Y2O3 provided additional vacancies for proton incorporation, resulting in steeper [H-2(+)]/[Y3+] slopes. Copyright (C) 2013, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.

引用

页码：2621 / 2627

页数：7

共 24 条

[1] Enhanced low-temperature protonic conductivity in fully dense nanometric cubic zirconia [J].

Anselmi-Tamburini, Umberto ;

Maglia, Filippo ;

Chiodelli, Gaetano ;

Riello, Pietro ;

Bucella, Stefania ;

Munir, Zuhair A. .

APPLIED PHYSICS LETTERS, 2006, 89 (16)

[2] Protonic conductivity of nano-structured yttria-stabilized zirconia: dependence on grain size [J].

Avila-Paredes, Hugo J. ;

Zhao, Jinfeng ;

Wang, Shizhong ;

Pietrowski, Martha ;

De Souza, Roger A. ;

Reinholdt, Alexander ;

Munir, Zuhair A. ;

Martin, Manfred ;

Kim, Sangtae .

JOURNAL OF MATERIALS CHEMISTRY, 2010, 20 (05) :990-994

[3] Improved Solid Oxide Fuel Cell Performance with Nanostructured Electrolytes [J].

Chao, Cheng-Chieh ;

Hsu, Ching-Mei ;

Cui, Yi ;

Prinz, Fritz B. .

ACS NANO, 2011, 5 (07) :5692-5696

[4] Surface Modification of Yttria-Stabilized Zirconia Electrolyte by Atomic Layer Deposition [J].

Chao, Cheng-Chieh ;

Kim, Young Beom ;

Prinz, Fritz B. .

NANO LETTERS, 2009, 9 (10) :3626-3628

[5] Characterization of low temperature protonic conductivity in bulk nanocrystalline fully stabilized zirconia [J].

Chiodelli, Gaetano ;

Maglia, Filippo ;

Anselmi-Tamburini, Umberto ;

Munir, Zuhair A. .

SOLID STATE IONICS, 2009, 180 (4-5) :297-301

[6] Atomic layer deposition of Y2O3 thin films from yttrium tris(N,N'-diisopropylacetamidinate) and water [J].

de Rouffignac, P ;

Park, JS ;

Gordon, RG .

CHEMISTRY OF MATERIALS, 2005, 17 (19) :4808-4814

[7] Grain size dependent grain boundary defect structure: case of doped zirconia [J].

Guo, X ;

Zhang, ZL .

ACTA MATERIALIA, 2003, 51 (09) :2539-2547

[8] Property degradation of tetragonal zirconia induced by low-temperature defect reaction with water molecules [J].

Guo, X .

CHEMISTRY OF MATERIALS, 2004, 16 (21) :3988-3994

[9] On the degradation of zirconia ceramics during low-temperature annealing in water or water vapor [J].

Guo, X .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1999, 60 (04) :539-546

[10]

Huang CY, 2001, J AM CERAM SOC, V84, P1637, DOI 10.1111/j.1151-2916.2001.tb00889.x

← 1 2 3 →