The Effect of Interconnect on the Circuit Performance of 22 nm Graphene Nanoribbon Field Effect Transistor and MOSFET

This study presents an analysis of 22 nm graphene nanoribbon field effect transistor (GNRFET) and 22 nm MOSFET 9-stage ring oscillator circuit. The effect of interconnect properties is assessed to see if the wire resistance or wire capacitance influence the circuit performance in 22 nm technology node for both GNRFET and MOSFET. We employed two types equivalent interconnect wire circuit to evaluate the propagation delay, power delay product (PDP) and energy delay product (EDP). Local wire interconnect length is investigated within 1 mu m-1000 mu m utilizing Copper (Cu), multi-walled carbon nanotube (MWCNT) and graphene nanoribbon (GNR) wire. Within the investigated wire length and the tested circuit, 22 nm MOSFET propagation delay interconnected with Cu and MWCNT did not show any influence by wire resistance. The upsizing of MOSFET width eventually shows the wire resistance contribution to the circuit propagation delay at wire length of more than approximate to 200 mu m. In the case of 22 nm GNRFET, at approximate to 50 mu m wire length, wire resistance has shown noticeable contribution to the circuit propagation delay. In terms of EDP and PDP, 22 nm GNRFET gives more than 70% improvement compares to 22 nm MOSFET. The simulation results indicates that at 22 nm technology node MOSFET, the interconnect wire resistance is not crucial when interconnected with Cu and CNT for width of less than 100 nm. Meanwhile in 22 nm GNRFET, the contribution of wire resistance is noticeable. These suggest that interconnect properties should be improved in order to optimized circuit performance.