Dependence of the linewidth enhancement factor on the number of compressively strained quantum well in lasers

被引：8
作者：
Cho, SH
Lu, CC
Hovinen, M
Nam, K
Vusirikala, V
Song, JH
Johnson, FG
Stone, D
Dagenais, M
机构：
[1] UNIV MARYLAND,JOINT PROGRAM ADV ELECT MAT,COLLEGE PK,MD 20742
[2] LAB PHYS SCI,COLLEGE PK,MD 20740
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 08期
基金：
美国国家航空航天局;
关键词：
linewidth enhancement factor; quantum-well lasers; ridge waveguide; semiconductor lasers;
D O I：
10.1109/68.605507
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have systematically studied the well number dependence of the linewidth enhancement factor in strained quantum-well (QW) lasers and have demonstrated experimentally that the linewidth enhancement factor can be reduced from similar to 9.4 to similar to 2.0 by increasing the number of compressively strained QW's from 2 to 8. This behavior is primarily due to an increase in the differential gain with the number of QW's.
引用
收藏
页码：1081 / 1083
页数：3
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